Insertion of CdSe quantumdots in ZnSe nanowires : MBE growth and microstructure analysis

摘要

ZnSe nanowire growth has been successfully achieved on ZnSe (100) and (111)Bbuffer layers deposited on GaAs substrates. Cubic [100] oriented ZnSe nanowiresor [0001] oriented hexagonal NWs are obtained on (100) substrates while [111]oriented cubic mixed with [0001] oriented hexagonal regions are obtained on(111)B substrates. Most of the NWs are perpendicular to the surface in the lastcase. CdSe quantum dots were successfully incorporated in the ZnSe NWs asdemonstrated by transmission electron microscopy, energy filtered TEM and highangle annular dark field scanning TEM measurements.